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mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?p6 600vcoolmos?p6powertransistor ipx60r600p6 datasheet rev.2.2 final powermanagement&multimarket
2 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet d2pak to-220 to-220fp dpak 1description coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?p6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. theoffereddevicesprovideallbenefitsofafastswitchingsjmosfet whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. features ?increasedmosfetdv/dtruggedness ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforindustrialgradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server,telecom andups. pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 650 v r ds(on),max 600 m w q g.typ 12 nc i d,pulse 18 a e oss @400v 1.8 j body diode di/dt 500 a/s type/orderingcode package marking relatedlinks ipb60r600p6 pg-to 263 ipp60r600p6 pg-to 220 ipa60r600p6 pg-to 220 fullpak IPD60R600P6 pg-to 252 6r600p6 see appendix a 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 7.3 4.6 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 18 a t c =25c avalanche energy, single pulse e as - - 133 mj i d =1.3a; v dd =50v; see table 12 avalanche energy, repetitive e ar - - 0.20 mj i d =1.3a; v dd =50v; see table 12 avalanche current, repetitive i ar - - 1.3 a - mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0...400v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation (non fullpak) to-220, to-252, to-263 p tot - - 63 w t c =25c power dissipation (fullpak) to-220fp p tot - - 28 w t c =25c storage temperature t stg -55 - 150 c - operating junction temperature t j -55 - 150 c - mounting torque (non fullpak) to-220 - - - 60 ncm m3 and m3.5 screws mounting torque (fullpak) to-220fp - - - 50 ncm m2.5 screws continuous diode forward current i s - - 6.3 a t c =25c diode pulse current 2) i s,pulse - - 18 a t c =25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c see table 10 maximum diode commutation speed di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c see table 10 insulation withstand voltage for to-220fp v iso - - 2500 v v rms , t c =25c, t =1min 1) limited by t j max . maximum duty cycle d=0.75 2) pulse width t p limited by t j,max 3) identicallowsideandhighsideswitchwithidentical r g 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet 3thermalcharacteristics table3thermalcharacteristics(nonfullpak)to-220 values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 2 c/w - thermal resistance, junction - ambient r thja - - 62 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s table4thermalcharacteristics(fullpak)to-220fp values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 4.5 c/w - thermal resistance, junction - ambient r thja - - 80 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s table5thermalcharacteristicsto-252,to-263 values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 2 c/w - thermal resistance, junction - ambient r thja - - 62 c/w device on pcb, minimal footprint thermal resistance, junction - ambient for smd version r thja - 35 45 c/w device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70m thickness) copper area for drain connection and cooling. pcb is vertical without air stream cooling. soldering temperature, wave & reflow soldering allowed t sold - - 260 c reflow msl1 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet 4electricalcharacteristics at t j =25c,unlessotherwisespecified table6staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 600 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 3.5 4.0 4.5 v v ds = v gs , i d =0.2ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =600, v gs =0v, t j =25c v ds =600, v gs =0v, t j =150c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.540 1.404 0.600 - w v gs =10v, i d =2.4a, t j =25c v gs =10v, i d =2.4a, t j =150c gate resistance r g - 11 - w f =1mhz,opendrain table7dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 557 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 28 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 23 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 2) c o(tr) - 88 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 11 - ns v dd =400v, v gs =13v, i d =3a, r g =6.8 w ;seetable11 rise time t r - 7 - ns v dd =400v, v gs =13v, i d =3a, r g =6.8 w ;seetable11 turn-off delay time t d(off) - 33 - ns v dd =400v, v gs =13v, i d =3a, r g =6.8 w ;seetable11 fall time t f - 14 - ns v dd =400v, v gs =13v, i d =3a, r g =6.8 w ;seetable11 table8gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 3 - nc v dd =400v, i d =3a, v gs =0to10v gate to drain charge q gd - 5 - nc v dd =400v, i d =3a, v gs =0to10v gate charge total q g - 12 - nc v dd =400v, i d =3a, v gs =0to10v gate plateau voltage v plateau - 6.1 - v v dd =400v, i d =3a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to400v 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet table9reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =3a, t j =25c reverse recovery time t rr - 196 - ns v r =400v, i f =3a,d i f /d t =100a/s; see table 10 reverse recovery charge q rr - 1.7 - c v r =400v, i f =3a,d i f /d t =100a/s; see table 10 peak reverse recovery current i rrm - 17 - a v r =400v, i f =3a,d i f /d t =100a/s; see table 10 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation(nonfullpak) t c [c] p tot [w] 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 p tot =f( t c ) diagram2:powerdissipation(fullpak) t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 30 p tot =f( t c ) diagram3:max.transientthermalimpedance(nonfullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t diagram4:max.transientthermalimpedance(nonfullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet diagram5:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram6:safeoperatingarea(fullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram7:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram8:safeoperatingarea(fullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet diagram9:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 5 10 15 20 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram10:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 3 6 9 12 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram11:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 5 10 15 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 20 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram12:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 98% typ r ds(on) =f( t j ); i d =2.4a; v gs =10v 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
11 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet diagram13:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 5 10 15 20 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram14:typ.gatecharge q gate [nc] v gs [v] 0 3 6 9 12 15 0 1 2 3 4 5 6 7 8 9 10 120 v 480 v v gs =f( q gate ); i d =3.0apulsed;parameter: v dd diagram15:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 125 c 25 c i f =f( v sd );parameter: t j diagram16:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 20 40 60 80 100 120 140 e as =f( t j ); i d =1.3a; v dd =50v 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
12 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet diagram17:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 520 540 560 580 600 620 640 660 680 700 v br(dss) =f( t j ); i d =1ma diagram18:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram19:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e oss = f (v ds ) 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
13 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet 6testcircuits table10diodecharacteristics table11switchingtimes table12unclampedinductiveload 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
14 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet 7packageoutlines figure1outlinepg-to263,dimensionsinmm/inches 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
15 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet figure2outlinepg-to220,dimensionsinmm/inches 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
16 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet figure3outlinepg-to220fullpak,dimensionsinmm/inches 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 04 05-05-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054
17 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet figure4outlinepg-to252,dimensionsinmm/inches 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 04 05-05-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054
18 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet 8appendixa table13relatedlinks ? ifxcoolmos tm p6webpage: www.infineon.com ? ifxcoolmos tm p6applicationnote: www.infineon.com ? ifxcoolmos tm p6simulationmodel: www.infineon.com ? ifxdesigntools: www.infineon.com 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 04 05-05-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054
19 600vcoolmos?p6powertransistor ipb60r600p6,ipp60r600p6,ipa60r600p6, IPD60R600P6 rev.2.2,2015-07-10 final data sheet revisionhistory ipb60r600p6, ipp60r600p6, ipa60r600p6, IPD60R600P6 revision:2015-07-10,rev.2.2 previous revision revision date subjects (major changes since last revision) 2.0 2013-12-05 release of final version 2.1 2013-12-05 release of multi-package datasheet 2.2 2015-07-10 pg-to 263 package added welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 1 2 3 tab tab tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 04 05-05-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054

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